Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

Details Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

2003-10-06

arxiv.org/abs/cond-mat/0310107v1

Superlattices Microstruct. 33, 271 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1016/j.spmi.2004.02.003

The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

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