Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

Details Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

2003-01-27

arxiv.org/abs/cond-mat/0301508v1

Physics

Condensed Matter

Materials Science

8 pages, 4 figures, table

Scientific paper

10.1063/1.1559426

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.

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