Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization

Details Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization

2009-09-22

arxiv.org/abs/0909.4104v2

Nanotechnology 21, 085702 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1088/0957-4484/21/8/085702

We describe a pulsed measurement technique to suppress hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable to other nanoscale devices such as graphene, nanowires, and molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.

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