Reduced leakage current in BiFeO3 thin films with rectifying contacts

Details Reduced leakage current in BiFeO3 thin films with rectifying contacts Reduced leakage current in BiFeO3 thin films with rectifying contacts

2011-05-19

arxiv.org/abs/1105.3825v1

Appl. Phys. Lett. 98, 232901 (2011)

Physics

Condensed Matter

Materials Science

15 pages, 4 figures, accepted by Appl. Phys. Lett

Scientific paper

10.1063/1.3597794

BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.

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