Rectification in three-terminal graphene junctions

Details Rectification in three-terminal graphene junctions Rectification in three-terminal graphene junctions

2010-07-22

arxiv.org/abs/1007.3924v1

Appl. Phys. Lett. 97, 032110 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3464978

Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.

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