Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities

Details Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities

2007-04-30

arxiv.org/abs/0704.3974v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures. Submitted to the Microelectronic Journal

Scientific paper

In this work the influence of the electric and magnetic fields over a tunneling particle in a rectangular potential barrier is shown, we have taken into account the presence of an impurity at the barrier center and the effects of a hydrostatic pressure parallel to the barrier height considering the BenDaniel-Duke boundary conditions. Given that the particle is moving inside a GaAs-AlxGa1-xAs-GaAs heterostructures it is evident a change in the transmission coefficient due to the impurity concentration and the presence of the hydrostatic pressure. The potential due to the presence of the impurity is approximate with a second degree polynomial function that resolves the discontinuity generated by heavily modifying the transmission coefficient.

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