Recrystallization of epitaxial GaN under indentation

Details Recrystallization of epitaxial GaN under indentation Recrystallization of epitaxial GaN under indentation

2008-04-11

arxiv.org/abs/0804.1824v2

Appl. Phys. Lett. 92 (2008) 143114

Physics

Condensed Matter

Materials Science

10 pages, 3 figures,

Scientific paper

10.1063/1.2907851

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.

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