Physics – Condensed Matter – Materials Science
Scientific paper
Dec 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1734..140l&link_type=abstract
In: Gamma-ray detectors; Proceedings of the Meeting, San Diego, CA, July 21, 22, 1992 (A93-30101 11-35), p. 140-145.
Physics
Condensed Matter
Materials Science
Gallium Arsenides, Gamma Rays, Indium Phosphides, Radiation Detectors, Semiconductors (Materials), Materials Science, Research And Development, Single Crystals
Scientific paper
The requirements of a semiconductor material intended to operate in a gamma-ray detector at room temperatures are discussed, and the status of the search for alternative materials is reviewed. The important material characteristics of a semiconductor gamma-ray detector material are high average atomic number, material's uniformity, resistivity, and electron and holes transport properties. Materials under investigation include GaAs, InP, TlBr, and PbI2. Theoretically, it is considered to be feasible to built a large volume semiconductor gamma-ray detector capable of good energy resolution at room temperature. But it is very unlikely that a semiconductor detector with germanium-like performance will be available in the next five years.
Lund James C.
Olschner Fred
Shah Kanai S.
Squillante Michael R.
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