Realizing Wide Bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with low collectoremitter offset voltage and high current gain - A novel proposal using numerical simulation

Details Realizing Wide Bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with low collectoremitter offset voltage and high current gain - A novel proposal using numerical simulation Realizing Wide Bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with low collectoremitter offset voltage and high current gain - A novel proposal using numerical simulation

2010-08-18

arxiv.org/abs/1008.3031v1

IEE Proceedings - Circuits, Devices and Systems, Vol.151, pp.399-405, October 2004

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

http://web.iitd.ac.in/~mamidala/

Scientific paper

We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-emitter offset-voltage VCE(offset) is reduced drastically by eliminating the built-in potential difference between the emitter-base (EB) junction and collector-base (CB) junction by using a SiC-on-Si P-emitter. We demonstrate that the proposed dualbandgap P-emitter HBT together with the SiGe base and Schottky collector, not only has a very low VCE(offset) but also exhibits high current gain, reduced Kirk effect, excellent transient response and high cutoff frequency. We evaluated the performance of the proposed device in detail using two dimensional device simulation and a possible BiCMOS compatible fabrication procedure is also suggested.

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