Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography

Details Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography

2012-01-18

arxiv.org/abs/1201.3682v1

NanoLetters 12, pp 1-6 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 5 figures. Submitted version, published version available at http://http://pubs.acs.org/journal/nalefd

Scientific paper

10.1021/nl104403g

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the sub-threshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 to 4 Kelvin, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.

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