Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

Details Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

2002-04-23

arxiv.org/abs/cond-mat/0204487v1

Physics

Condensed Matter

Submitted to Applied Physics Letters

Scientific paper

10.1063/1.1526161

We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization doped electron distributions than comparable shallow donor doped structures. The technique is readily employed for creating highly conductive layers in many device structures.

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