Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric

Details Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric

2009-01-19

arxiv.org/abs/0901.2901v2

Appl. Phys. Lett. 94, 062107 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures; to appear in Appl. Phys. Lett

Scientific paper

10.1063/1.3077021

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

Affiliated with

Also associated with

No associations

Rating

Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-567035