Realistic modeling of the electronic structure and the effect of correlations for Sn/Si(111) and Sn/Ge(111) surfaces

Details Realistic modeling of the electronic structure and the effect of correlations for Sn/Si(111) and Sn/Ge(111) surfaces Realistic modeling of the electronic structure and the effect of correlations for Sn/Si(111) and Sn/Ge(111) surfaces

2010-03-16

arxiv.org/abs/1003.3224v1

Physics

Condensed Matter

Materials Science

11 pages, 13 figures

Scientific paper

10.1103/PhysRevB.82.035116

The correlated electronic structure of the submonolayer surface systems Sn/Si(111) and Sn/Ge(111) is investigated by density-functional theory (DFT) and its combination with explicit many-body methods. Namely, the dynamical mean-field theory and the slave-boson mean-field theory are utilized for the study of the intriguing interplay between structure, bonding and electronic correlation. In this respect, explicit low-energy one- and four($sp^2$-like)-band models are derived using maximally-localized Wannier(-like) functions. In view of the possible low-dimensional magnetism in the Sn submonolayers we compare different types of magnetic orders and indeed find a 120$^\circ$ antiferromagnetic ordering to be stable in the ground state. With single-site methods and cellular-cluster extensions the influence of a finite Hubbard $U$ on the surface states in a planar and a reconstructed structural geometry is furthermore elaborated.

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