Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors

Details Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors

2006-11-14

arxiv.org/abs/cond-mat/0611384v1

Phys. Rev. B 75, 235203 (2007)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.75.235203

Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an intriguing re-entrant ferromagnetism, with a paramagnetic phase (T_2 > T > T_3) between two ferromagnetic phases, arises from a subtle competition between indirect exchange induced by thermally activated carriers in an otherwise empty conduction band versus the exchange coupling existing in the impurity band due to the bound carriers themselves. We comment on the possibility of observing such a re-entrance phenomenon in diluted magnetic semiconductors and magnetic oxides.

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