Random gap model for graphene and graphene bilayers

Details Random gap model for graphene and graphene bilayers Random gap model for graphene and graphene bilayers

2008-11-24

arxiv.org/abs/0811.3932v1

Phys. Rev. Lett. 102, 126802 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 1 figure

Scientific paper

10.1103/PhysRevLett.102.126802

The effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate and transport properties (diffusion coefficient and conductivity) are calculated at the neutrality point. All these quantities vanish at a critical value of the average staggered potential, signaling a continuous transition to an insulating behavior. The calculations are based on the self-consistent Born approximation for the one-particle scattering rate and a massless mode of the two-particle Green's function which is created by spontaneous symmetry breaking. Transport quantities are directly linked to the one-particle scattering rate. Moreover, the effect of disorder is very weak in the case of a monolayer but much stronger in bilayer graphene.

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