Physics – Condensed Matter – Materials Science
Scientific paper
2010-06-28
J. Appl. Phys. 109, 083712 (2011)
Physics
Condensed Matter
Materials Science
18 pages, 5 figures, final version
Scientific paper
10.1063/1.3561497
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of the barrier and leads to the resistive switching effects. A double-well model for trapped electrons in MgO is introduced to theoretically describe this phenomenon. Including the statistical distribution of potential barrier heights for these traps leads to a power-law dependence of the resistance as a function of time, under a constant bias voltage. This model also predicts a power-law relation of the hysteresis as a function of the voltage sweep frequency. Experimental transport results strongly support this model and in particular confirm the expected power laws dependencies of resistance. They moreover indicate that the exponent of these power laws varies with temperature as theoretically predicted.
Arabski Jacek
Bertin Eric
Bowen Martin
DaCosta Victor
Doudin Bernard
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