Raman spectroscopy of InN films grown on Si

Details Raman spectroscopy of InN films grown on Si Raman spectroscopy of InN films grown on Si

1999-10-18

arxiv.org/abs/cond-mat/9910266v1

Physics

Condensed Matter

Materials Science

3 pages, 1 eps figure, RevTeX

Scientific paper

10.1016/S0038-1098(00)00132-0

We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which correspond to the A_1(TO), E_1(TO), E_2^{high}, and A_1(LO) phonons of the wurtzite structure, respectively. In backscattering normal to the surface the A_1(TO) and E_1(TO) peaks are very weak, indicating that the films grow along the hexagonal c axis. The dependence of the peak width on growth temperature reveals that the optimum temperature is 500 C, for which the fullwidth of the E_2^{high} peak has the minimum value of 7 cm{-1}. This small value, comparable to previous results for InN films grown on sapphire, is evidence of the good crystallinity of the films.

Affiliated with

Also associated with

No associations

Rating

Raman spectroscopy of InN films grown on Si does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Raman spectroscopy of InN films grown on Si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Raman spectroscopy of InN films grown on Si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-325225