Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Details Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3 Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

2011-11-27

arxiv.org/abs/1111.6284v1

Physics

Condensed Matter

Materials Science

Scientific paper

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral ({\alpha}-Bi2Te3) to monoclinic ({\beta}-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Gr\"uneisen parameters are determined in both the {\alpha} and {\beta}-phases.

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