Raman signature of electron-electron correlation in chemically doped few-layer graphene

Details Raman signature of electron-electron correlation in chemically doped few-layer graphene Raman signature of electron-electron correlation in chemically doped few-layer graphene

2011-06-06

arxiv.org/abs/1106.1107v1

Phys. Rev. B 83, 241401(R) (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.83.241401

We report an experimental Raman study of few-layer graphene after chemical doping achieved by a plasma process in CHF$_3$ gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing the doping level. Both effects can be ascribed to the electron-electron correlation, which on the one hand reduces the electron-phonon coupling strength, and on the other hand affects the probability of the double resonant Raman process.

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