Raman scattering in osmium under pressure

Details Raman scattering in osmium under pressure Raman scattering in osmium under pressure

2005-03-11

arxiv.org/abs/cond-mat/0503272v1

Physics

Condensed Matter

Other Condensed Matter

4 pages, 2 figures

Scientific paper

10.1103/PhysRevB.71.220301

The effect of pressure and temperature on the Raman-active phonon mode of osmium metal has been investigated for pressures up to 20 GPa and temperatures in the range 10--300 K. Under hydrostatic conditions (He pressure medium) the phonon frequency increases at a rate of 0.73(5) cm^{-1}/GPa (T = 300 K). A large temperature-induced and wavelength-dependent frequency shift of the phonon frequency is observed, of which only a small fraction can be associated with the thermal volume change. The main contribution to the temperature dependence of the phonon frequency is rather attributed to non-adiabatic effects in the electron-phonon interaction, which explains also the observation of an increasing phonon line width upon cooling. The phonon line width and the pressure-induced frequency shift were found to be unusually sensitive to shear stress.

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