Raman imaging of doping domains in graphene on SiO2

Details Raman imaging of doping domains in graphene on SiO2 Raman imaging of doping domains in graphene on SiO2

2007-09-26

arxiv.org/abs/0709.4156v1

Appl. Phys. Lett., 91, 241907, (2007)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2816262

We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line -- the most significant Raman peak to identify single-layer graphene -- as a function of charging up to |n|~4 10^12 cm^-2. Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole-doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the line width of the 2D line is, in contrast to the G line, doping-independent making this quantity a reliable measure for identifying single-layer graphene.

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