Raman Fingerprint of Charged Impurities in Graphene

Details Raman Fingerprint of Charged Impurities in Graphene Raman Fingerprint of Charged Impurities in Graphene

2007-09-17

arxiv.org/abs/0709.2566v1

Appl. Phys. Lett. 91, 233108 (2007)

Physics

Condensed Matter

Materials Science

3 pages, 5 figures

Scientific paper

10.1063/1.2818692

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron.

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