Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Details Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

2011-05-06

arxiv.org/abs/1105.1235v1

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on, 221-222 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2 pages, 3 figures

Scientific paper

10.1109/COMMAD.2010.5699750

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.

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