Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium

Details Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium

2009-11-13

arxiv.org/abs/0911.2650v1

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. The change character and extent of the photon emission quantum efficiency have been established to be defined by vacancy structure of crystal that is most likely caused by formation of EL2-dopant complexes.

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