Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs

Details Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs

2007-11-04

arxiv.org/abs/0711.0517v1

Physics

Condensed Matter

Materials Science

4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, August 20

Scientific paper

We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the MQW samples exhibiting 15 nm wells width and 5 nm-thick barrier layers is about 3 10E12 cm-2.

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