Radiation-induced zero-resistance states with resolved Landau levels

Details Radiation-induced zero-resistance states with resolved Landau levels Radiation-induced zero-resistance states with resolved Landau levels

2005-01-05

arxiv.org/abs/cond-mat/0501091v1

Appl. Phys. Lett. 85, 4962 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 color figures, published version

Scientific paper

10.1063/1.1825066

The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, m$^{*}$ is an the effective mass, e is the charge, \textit{f} is the microwave frequency, and $j$ =1,2,3... Here, we report transport with well-resolved Landau levels, and some transmission characteristics.

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