Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices

Details Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices

2005-12-13

arxiv.org/abs/cond-mat/0512281v1

Phys. Rev. B 72, 075327 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 color figures, final version

Scientific paper

10.1103/PhysRevB.72.075327

We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high mobility two-dimensional electron system. In analogy to the 2D Shubnikov-de Haas effect, the characteristic field, $B_{f}$, and the period of the radiation-induced magnetoresistance oscillations appears dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component, $B_{//}$, in the range of $0.6 < B_{//} < 1.2$ Tesla, at a tilt angle of $\theta = 80^{0}$, leaves the oscillatory pattern essentially unchanged.

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