Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

Details Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

2003-10-20

arxiv.org/abs/cond-mat/0310474v2

Phys. Rev. B 69, 161306 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages text, 4 color figures

Scientific paper

10.1103/PhysRevB.69.161306

We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.

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