Radial Dependence of the Carrier Mobility in Semiconductor Nanowires

Details Radial Dependence of the Carrier Mobility in Semiconductor Nanowires Radial Dependence of the Carrier Mobility in Semiconductor Nanowires

2005-07-08

arxiv.org/abs/cond-mat/0507201v1

J. Phys.: Condens. Matter 17 (2005) 6675-6685

Physics

Condensed Matter

Materials Science

Scientific paper

10.1088/0953-8984/17/42/008

The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent increase in available scattering channels causes strongly non-monotonic dependence of the mobility on the radius. The inter-band scattering causes sharp declines in the mobility at the wire radii at which each new channel becomes available. At intermediate radii with the number of channels unchanged the mobility is seen to maintain an exponential growth even with multiple channels. We also compare the effects of changing the radial scaling of the impurity distribution. We use transverse carrier wavefunctions that are consistent with boundary conditions and demonstrate that the $\delta$-function approximate transverse profile leads to errors in the case of remote impurities.

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