Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions

Details Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions

2008-07-17

arxiv.org/abs/0807.2885v1

Phys. Rev. B 78, 195307 (2008)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.78.195307

We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased \gma layer. The distinctive tunneling anisotropic magnetoresistance of \gma produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

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