Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Details Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

2011-01-02

arxiv.org/abs/1101.0421v1

Physics

Condensed Matter

Materials Science

Scientific paper

We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system.

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