Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC

Details Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC

2011-06-28

arxiv.org/abs/1106.5811v1

Phys. Rev. B 81, 241417(R) (2010)

Physics

Condensed Matter

Materials Science

http://link.aps.org/doi/10.1103/PhysRevB.81.241417

Scientific paper

10.1103/PhysRevB.81.241417

The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB- bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

Affiliated with

Also associated with

No associations

Rating

Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-358676