Physics – Condensed Matter – Materials Science
Scientific paper
2010-08-11
Physics
Condensed Matter
Materials Science
in print in Phys. Rev. B
Scientific paper
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, X-ray photoemission and absorption techniques. It has been demonstrated that the transition of the hbn layer from the "rigid" into the "quasi-freestanding" state is accompanied by a change of its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasi-freestanding hbn monolayer. We anticipate that the in situ synthesized weakly interacting graphene/hbn double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
Adamchuk V. K.
Grüneis Alexander
Haberer D.
Laubschat C.
Preobrajenski A. B.
No associations
LandOfFree
Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-479943