Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation

Details Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation

2009-11-10

arxiv.org/abs/0911.1953v1

Phys. Rev. Lett. 103, 246804 (2009)

Physics

Condensed Matter

Materials Science

Accepted for publication in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.103.246804

Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free standing graphene monolayer with its typical linear pi-bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees Celsius.

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