Quasi-ballistic transport in HgTe quantum-well nanostructures

Details Quasi-ballistic transport in HgTe quantum-well nanostructures Quasi-ballistic transport in HgTe quantum-well nanostructures

2003-05-05

arxiv.org/abs/cond-mat/0305078v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures; minor revisions: replaced "inelastic mean free path" with "transport mean free path"; corrected typing err

Scientific paper

10.1063/1.1602170

The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum-wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 $\mu$m. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semi-classical electron trajectories show good agreement with the experiment.

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