Quantum Well Based on Graphene and Narrow-Gap Semiconductors

Details Quantum Well Based on Graphene and Narrow-Gap Semiconductors Quantum Well Based on Graphene and Narrow-Gap Semiconductors

2008-08-25

arxiv.org/abs/0808.3388v1

Physics

Condensed Matter

Other Condensed Matter

13 pages, 2 figures, 1 table

Scientific paper

We consider the energy spectrum of the planar quantum well which consisted of two ribbons of narrow-gap semiconductors and a graphene ribbon between ones. It is shown that the gapless mode appears only in case of inverted narrow-gap semiconductors. Spin splitting of the energy spectrum for a nonsymmetric quantum well is calculated taking into account a specificity of graphene. We investigate interface states and optical transitions. It is shown that the optical transitions are possible only with a conservation of a parity.

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