Quantum transport properties of ultrathin silver nanowires

Details Quantum transport properties of ultrathin silver nanowires Quantum transport properties of ultrathin silver nanowires

2002-09-23

arxiv.org/abs/cond-mat/0209535v1

Physics

Condensed Matter

Materials Science

4 pages, 6 figures

Scientific paper

10.1088/0957-4484/14/5/304

The quantum transport properties of the ultrathin silver nanowires are investigated. For a perfect crystalline nanowire with four atoms per unit cell, three conduction channels are found, corresponding to three $s$ bands crossing the Fermi level. One conductance channel is disrupted by a single-atom defect, either adding or removing one atom. Quantum interference effect leads to oscillation of conductance versus the inter-defect distance. In the presence of multiple-atom defect, one conduction channel remains robust at Fermi level regardless the details of defect configuration. The histogram of conductance calculated for a finite nanowire (seven atoms per cross section) with a large number of random defect configurations agrees well with recent experiment.

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