Physics – Condensed Matter – Disordered Systems and Neural Networks
Scientific paper
2008-01-10
Phys. Rev. B 77, 085301 (2008)
Physics
Condensed Matter
Disordered Systems and Neural Networks
13 pages, to appear in PRB
Scientific paper
10.1103/PhysRevB.77.085301
We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are explored numerically by using efficient real space order N computational approaches of both Kubo-Greenwood and Landauer-Buttiker transport frameworks. Quantitative estimations of the elastic mean free paths, charge mobilities and localization lengths are performed as a function of the correlation length of the surface roughness disorder. The obtained values for charge mobilities well compare with the experimental estimates of the most performant undoped nanowires. Further the limitations of the Thouless relationship between the mean free path and the localization length are outlined.
Lherbier Aurelien
Niquet Yann-Michel
Persson Martin
Roche Stephan
Triozon Francois
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