Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures

Details Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures

2006-08-16

arxiv.org/abs/cond-mat/0608357v1

Physics

Condensed Matter

Materials Science

Scientific paper

We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were successfully explained by the valence-band kp model with the p-d exchange interaction. It was also found that the Fermi level of the electrode injecting carriers is important to observe resonant tunneling in this system.

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