Quantum Resistance Standard Based on Epitaxial Graphene

Details Quantum Resistance Standard Based on Epitaxial Graphene Quantum Resistance Standard Based on Epitaxial Graphene

2009-09-07

arxiv.org/abs/0909.1220v1

Nature Nanotechnology 5, 186 - 189 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted

Scientific paper

10.1038/nnano.2009.474

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.

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