Quantum Mott transition in a silicon quantum dot

Details Quantum Mott transition in a silicon quantum dot Quantum Mott transition in a silicon quantum dot

1998-02-21

arxiv.org/abs/cond-mat/9802227v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 2 figures in eps

Scientific paper

Considering a double-barrier structure formed by a silicon quantum dot
covered by natural oxide, we derive simple conditions for the conductance of
the dot to become a step-like function of the number of doping atoms inside the
dot, with negligible dependence on the actual position of the dopants. The
found conditions are feasible in experimentally available structures.

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