Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers

Details Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers

2009-12-17

arxiv.org/abs/0912.3409v1

Physics

Condensed Matter

Materials Science

12 pages, 4 figures

Scientific paper

We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels and modulate the spin-dependent current with varying the voltage of the electrode connected to the GaMnAs QW. Our results will open up a new possibility for realizing three-terminal spin resonant-tunneling devices.

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