Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

Details Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

2005-09-27

arxiv.org/abs/cond-mat/0509692v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, accepted for publication in EPJ B

Scientific paper

10.1002/pssc.200565227

A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.

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