Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors

Details Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors

2005-04-28

arxiv.org/abs/cond-mat/0504746v1

Phys. Rev. B 72, 125308 (2005)

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

10.1103/PhysRevB.72.125308

In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nano-transistors, such as gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.

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