Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance

Details Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance

2007-02-15

arxiv.org/abs/cond-mat/0702368v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

30 pages, 9 figures

Scientific paper

10.1103/PhysRevB.77.075332

We report the observation of a dependence of the low temperature resistance of individual single-crystal bismuth nanowires on the Aharonov-Bohm phase of the magnetic flux threading the wire. 55 and 75-nm wires were investigated in magnetic fields of up to 14 T. For 55 nm nanowires, longitudinal magnetoresistance periods of 0.8 and 1.6 T that were observed at magnetic fields over 4 T are assigned to h/2e to h/e magnetic flux modulation. The same modes of oscillation were observed in 75-nm wires. The observed effects are consistent with models of the Bi surface where surface states give rise to a significant population of charge carriers of high effective mass that form a highly conducting tube around the nanowire. In the 55-nm nanowires, the Fermi energy of the surface band is estimated to be 15 meV. An interpretation of the magnetoresistance oscillations in terms of a subband structure in the surface states band due to quantum interference in the tube is presented.

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