Quantum Hall Effect in Bilayer Graphene Grown on Cu by Chemical Vapor Deposition

Details Quantum Hall Effect in Bilayer Graphene Grown on Cu by Chemical Vapor Deposition Quantum Hall Effect in Bilayer Graphene Grown on Cu by Chemical Vapor Deposition

2012-02-14

arxiv.org/abs/1202.2930v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 5 figures

Scientific paper

We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggest a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors $\nu=4, 8, 12$ consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the inter-layer capacitance.

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