Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees

Details Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees

2003-08-27

arxiv.org/abs/cond-mat/0308557v2

Physica E 22, 181 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, figures included Typographical errors corrected, reference added

Scientific paper

10.1016/j.physe.2003.11.245

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.

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