Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

Details Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

2007-03-26

arxiv.org/abs/cond-mat/0703670v2

Appl. Phys. Lett. 90, 202104 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 2 figures

Scientific paper

10.1063/1.2740579

We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.

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