Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

Details Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

2011-09-12

arxiv.org/abs/1109.2385v2

Physical Review X 2, 011004 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 figures

Scientific paper

10.1103/PhysRevX.2.011004

The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau level splittings due to a lifting of the valley degeneracy are clearly observed.

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