Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene

Details Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene

2011-04-03

arxiv.org/abs/1104.0438v1

Nature Physics 7, 621-625 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Supplementary Information at http://jarilloherrero.mit.edu/wp-content/uploads/2011/04/Supplementary_Taychatanapat.pdf

Scientific paper

10.1038/nphys2008

We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum Hall effect. The massless and massive characters of the TLG subbands lead to a set of Landau level crossings, whose magnetic field and filling factor coordinates enable the direct determination of the Slonczewski-Weiss-McClure (SWMcC) parameters used to describe the peculiar electronic structure of trilayer graphene. Moreover, at high magnetic fields, the degenerate crossing points split into manifolds indicating the existence of broken-symmetry quantum Hall states.

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